Enhancement-mode Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistor with fluorine treatment
نویسندگان
چکیده
منابع مشابه
Turn-on voltage engineering and enhancement mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces
0038-1101/$ see front matter 2010 Elsevier Ltd. A doi:10.1016/j.sse.2010.06.008 * Corresponding author. E-mail address: [email protected] A novel device design for enhancement mode operation of III-nitride high electron mobility transistor (HEMT) structure has been proposed and demonstrated. The proposed HEMT device structure consists of a multi-heterojunction (SiO2/AlxGa1 xN/GaN/A...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2019
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.5064543